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IXFN44N80P
MOSFET Transistor, N Channel, 44 A, 800 V, 0.19 ohm, 10 V, 5 V
圖片僅供舉例說明。 請參閱產品描述。
可供訂購
製造商標準交貨時間：29 週
有貨時通知我
| 數量 | 價格 |
|---|---|
| 1+ | NT$1,381.940 |
| 5+ | NT$1,254.760 |
| 10+ | NT$1,127.570 |
| 50+ | NT$1,046.460 |
| 100+ | NT$965.790 |
價格Each
最少: 1
多項: 1
NT$1,381.94
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商產品編號IXFN44N80P复制
製造商標準前置時間29 週
訂購代碼1427323
技術資料表
Channel TypeN Channel
Continuous Drain Current Id44A
Drain Source Voltage Vds800V
Drain Source On State Resistance0.19ohm
Transistor Case StyleISOTOP
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max5V
Transistor MountingModule
Power Dissipation694W
Operating Temperature Max150°C
No. of Pins4Pins
Product Range-
MSL-
SVHCNo SVHC (17-Jan-2023)
產品總覽
The IXFN44N80P is a PolarHV™ HiPerFET N-channel enhancement-mode Power MOSFET features avalanche rated and fast intrinsic diode.
- International standard package
- miniBLOC with aluminium nitride isolation
- UL94V-0 Flammability rating
- Unclamped inductive switching (UIS) rated
- Rugged polysilicon gate cell structure
- Low package inductance
- Easy to mount
- Space savings
- High power density
應用
Power Management, Industrial, Motor Drive & Control, Lighting, Thermal Management
警告
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
技術規格
Channel Type
N Channel
Drain Source Voltage Vds
800V
Transistor Case Style
ISOTOP
Gate Source Threshold Voltage Max
5V
Power Dissipation
694W
No. of Pins
4Pins
MSL
-
Continuous Drain Current Id
44A
Drain Source On State Resistance
0.19ohm
Rds(on) Test Voltage
10V
Transistor Mounting
Module
Operating Temperature Max
150°C
Product Range
-
SVHC
No SVHC (17-Jan-2023)
相關產品
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法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：Germany
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：Germany
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (17-Jan-2023)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.03