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| 數量 | 價格 |
|---|---|
| 1+ | NT$527.050 |
| 5+ | NT$464.330 |
| 10+ | NT$401.600 |
| 50+ | NT$368.140 |
| 100+ | NT$334.670 |
| 250+ | NT$297.800 |
產品訊息
產品總覽
The IPW65R037C6 is a 650V CoolMOS™ C6 N-channel Power MOSFET offers easy control of switching behaviour. This CoolMOS™ is a revolutionary technology for high voltage power MOSFET, designed according to the super-junction(SJ) principle and pioneered by Infineon Technologies. The CoolMOS™ C6 combines the experience of the leading SJ MOSFET supplier with high class innovation. The device provides all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter and cooler.
- Extremely low losses due to very low figure of merit (RDS (ON) x Qg and EOSS)
- Very high commutation ruggedness
- Easy to use
- Better light load efficiency
- Outstanding reliability with proven CoolMOS™ quality combined with high body diode ruggedness
- Better performance in comparison to previous CoolMOS™ generations
- More efficient, more compact, lighter and cooler
- Improved power density
- Improved reliability
- General purpose part can be used in both soft and hard switching topologies
應用
Industrial, Power Management, Alternative Energy, Consumer Electronics, Communications & Networking, Automotive, Lighting
附註
For MOSFET paralleling the use of ferrite beads on the gate or separate totem poles is generally recommended.
技術規格
N Channel
83.2A
TO-247
10V
500W
150°C
-
No SVHC (25-Jun-2025)
650V
0.037ohm
Through Hole
3.5V
3Pins
CoolMOS C6 Series
MSL 1 - Unlimited
技術文件 (1)
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承擔產品生產最後程序之國家原產地:China
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RoHS
RoHS
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