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FQA8N100C
Power MOSFET, N Channel, 1 kV, 8 A, 1.2 ohm, TO-3PN, Through Hole
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| 數量 | 價格 |
|---|---|
| 1+ | NT$207.920 |
| 10+ | NT$108.330 |
| 100+ | NT$106.170 |
| 500+ | NT$104.000 |
| 1000+ | NT$101.840 |
價格Each
最少: 1
多項: 1
NT$207.92
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商ONSEMI
製造商產品編號FQA8N100C复制
製造商標準前置時間12 週
訂購代碼2453888
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds1kV
Continuous Drain Current Id8A
Drain Source On State Resistance1.2ohm
Transistor Case StyleTO-3PN
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max5V
Power Dissipation225W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCLead (25-Jun-2025)
產品總覽
The FQA8N100C is a N-channel QFET® enhancement-mode power MOSFET produced using planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce ON-state resistance and to provide superior switching performance and high avalanche energy strength. This device is suitable for switched mode power supplies, active power factor correction (PFC) and electronic lamp ballasts.
- Low gate charge (53nC)
- Low Crss (16pF)
- 100% avalanche tested
警告
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
技術規格
Channel Type
N Channel
Continuous Drain Current Id
8A
Transistor Case Style
TO-3PN
Rds(on) Test Voltage
10V
Power Dissipation
225W
Operating Temperature Max
150°C
Qualification
-
SVHC
Lead (25-Jun-2025)
Drain Source Voltage Vds
1kV
Drain Source On State Resistance
1.2ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
5V
No. of Pins
3Pins
Product Range
-
MSL
-
相關產品
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法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：Y-Ex
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:Lead (25-Jun-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.006401