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2N7002T.
Power MOSFET, N Channel, 60 V, 115 mA, 2 ohm, SOT-523F, Surface Mount
无库存
產品訊息
製造商ONSEMI
製造商產品編號2N7002T.复制
訂購代碼2322570
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id115mA
Drain Source On State Resistance2ohm
Transistor Case StyleSOT-523F
Transistor MountingSurface Mount
Rds(on) Test Voltage5V
Gate Source Threshold Voltage Max1.76V
Power Dissipation200mW
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (27-Jun-2024)
產品總覽
The 2N7002T is a N-channel enhancement-mode FET with low ON-resistance and low gate threshold voltage.
- Low input capacitance
- Fast switching speed
- Low input/output leakage
- Ultra-small surface-mount package
應用
Industrial, Power Management
技術規格
Channel Type
N Channel
Continuous Drain Current Id
115mA
Transistor Case Style
SOT-523F
Rds(on) Test Voltage
5V
Power Dissipation
200mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (27-Jun-2024)
Drain Source Voltage Vds
60V
Drain Source On State Resistance
2ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1.76V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
相關產品
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法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：South Korea
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：South Korea
承擔產品生產最後程序之國家
關稅編號：85412100
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (27-Jun-2024)
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產品合規憑證
重量 (公斤)：.0005