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FF1000UXTR23T2M1B5BPSA1
Silicon Carbide MOSFET, Half Bridge, N Channel, 1.335 kA, 2.3 kV, 1190 µohm, Module
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製造商INFINEON
製造商產品編號FF1000UXTR23T2M1B5BPSA1复制
製造商標準前置時間28 週
訂購代碼4749213
Product RangeXHP 2 Series
其他名稱SP006041778 and FF1000UXTR23T2M1_B5
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| 數量 | 價格 |
|---|---|
| 1+ | NT$180,464.530 |
價格Each
最少: 1
多項: 1
NT$180,464.53
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產品訊息
製造商INFINEON
製造商產品編號FF1000UXTR23T2M1B5BPSA1复制
製造商標準前置時間28 週
訂購代碼4749213
Product RangeXHP 2 Series
其他名稱SP006041778 and FF1000UXTR23T2M1_B5
技術資料表
MOSFET Module ConfigurationHalf Bridge
Channel TypeN Channel
Continuous Drain Current Id1.335kA
Drain Source Voltage Vds2.3kV
Drain Source On State Resistance1190µohm
Transistor Case StyleModule
No. of Pins15Pins
Rds(on) Test Voltage15V
Gate Source Threshold Voltage Max5.15V
Power Dissipation-
Operating Temperature Max175°C
Product RangeXHP 2 Series
SVHCNo SVHC (25-Jun-2025)
產品總覽
FF1000UXTR23T2M1B5BPSA1 is an XHP™2 series, 2.3kV, 1000A silicon carbide (SiC) MOSFET half-bridge module. It features Infineon’s advanced .XT interconnection technology for low inductance and reduced switching losses, delivering high efficiency and reliability in demanding power applications. With an on-resistance of approximately 0.95mohm and high thermal performance, it is ideal for renewable energy systems, traction drives, energy storage systems, and industrial motor drives requiring high power density and fast switching performance.
- Continuous drain current (IDN) of 2000A and repetitive peak current (IDRM) of 4000A
- High current density for efficient power handling
- Low inductive design to minimize parasitic effects
- Low switching losses for improved efficiency
- Maximum operating junction temperature (Tvj,op) of 175°C
- AlN substrate offering low thermal resistance
- AlSiC baseplate for excellent thermal cycling capability
- High creepage and clearance distances for enhanced safety
- High CTI (>600) package ensuring superior insulation performance
技術規格
MOSFET Module Configuration
Half Bridge
Continuous Drain Current Id
1.335kA
Drain Source On State Resistance
1190µohm
No. of Pins
15Pins
Gate Source Threshold Voltage Max
5.15V
Operating Temperature Max
175°C
SVHC
No SVHC (25-Jun-2025)
Channel Type
N Channel
Drain Source Voltage Vds
2.3kV
Transistor Case Style
Module
Rds(on) Test Voltage
15V
Power Dissipation
-
Product Range
XHP 2 Series
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：Germany
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：Germany
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:3A228.c
EU ECCN:3A228.c
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (25-Jun-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.000001