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350A Silicon Carbide (SiC) MOSFETs & Modules :
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Continuous Drain Current Id
=350A
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MOSFET Module Configuration
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Channel Type
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Drain Source Voltage Vds
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Transistor Case Style
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Rds(on) Test Voltage
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Drain Source On State Resistance
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No. of Pins
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Gate Source Threshold Voltage Max
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Power Dissipation
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包裝
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| 比較 | 製造商產品編號 | 訂購編號 | 製造商 / 描述 | 庫存量 | 項目價格 | 價格 (含關稅，不含營業稅) | 數量 | MOSFET Module Configuration | Channel Type | Continuous Drain Current Id | Drain Source Voltage Vds | Drain Source On State Resistance | Transistor Case Style | No. of Pins | Rds(on) Test Voltage | Gate Source Threshold Voltage Max | Power Dissipation | Operating Temperature Max | Product Range |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Each | 1+NT$11,933.570 5+NT$11,523.280 | Half Bridge | Dual N Channel | 350A | 1.2kV | 1960µohm | Module | 7Pins | 18V | 5.15V | - | 175°C | 62mm C Series | ||||||
Each | 1+NT$8,541.150 5+NT$7,547.000 | Half Bridge | Dual N Channel | 350A | 1.2kV | 5000µohm | Module | 36Pins | 18V | 4.4V | 979W | 150°C | - | ||||||
