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Silicon Carbide (SiC) MOSFETs & Modules :
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Gate Source Threshold Voltage Max
=2.81V
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MOSFET Module Configuration
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Channel Type
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Continuous Drain Current Id
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Drain Source Voltage Vds
(4)
Drain Source On State Resistance
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No. of Pins
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Rds(on) Test Voltage
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Power Dissipation
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Operating Temperature Max
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包裝
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| 比較 | 製造商產品編號 | 訂購編號 | 製造商 / 描述 | 庫存量 | 項目價格 | 價格 (含關稅，不含營業稅) | 數量 | MOSFET Module Configuration | Channel Type | Continuous Drain Current Id | Drain Source Voltage Vds | Drain Source On State Resistance | No. of Pins | Rds(on) Test Voltage | Gate Source Threshold Voltage Max | Power Dissipation | Operating Temperature Max |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Each | 1+NT$2,502.210 5+NT$2,251.990 10+NT$2,118.530 50+NT$2,076.160 | Half Bridge | Dual N Channel | 30A | 1.2kV | 0.042ohm | 18Pins | 20V | 2.81V | 74W | 175°C | ||||||
Each | 1+NT$6,219.610 5+NT$5,597.640 10+NT$5,265.930 | FourPack | Four N Channel | 51A | 1.2kV | 0.02ohm | 22Pins | 20V | 2.81V | 119W | 175°C | ||||||
Each | 1+NT$3,139.960 5+NT$2,971.020 10+NT$2,802.080 50+NT$2,746.040 | FourPack | Four N Channel | 30A | 1.2kV | 0.042ohm | 22Pins | 20V | 2.81V | 74W | 175°C | ||||||
Each | 1+NT$4,646.940 5+NT$4,182.250 10+NT$3,934.410 | Half Bridge | Dual N Channel | 51A | 1.2kV | 0.02ohm | 18Pins | 20V | 2.81V | 119W | 175°C | ||||||
