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Silicon Carbide (SiC) MOSFETs & Modules :
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Power Dissipation
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Drain Source Voltage Vds
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Gate Source Threshold Voltage Max
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| 比較 | 製造商產品編號 | 訂購編號 | 製造商 / 描述 | 庫存量 | 項目價格 | 價格 (含關稅，不含營業稅) | 數量 | MOSFET Module Configuration | Channel Type | Continuous Drain Current Id | Drain Source Voltage Vds | Drain Source On State Resistance | Transistor Case Style | No. of Pins | Rds(on) Test Voltage | Gate Source Threshold Voltage Max | Power Dissipation | Operating Temperature Max | Product Range |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Each | 1+NT$882.720 5+NT$831.000 10+NT$779.270 50+NT$727.550 100+NT$675.820 | Single | N Channel | 116A | 900V | 0.016ohm | TO-247 | 4Pins | 18V | 4.3V | 484W | 175°C | TUK SGACK902S Keystone Coupler | ||||||
Each | 1+NT$882.720 5+NT$825.230 10+NT$767.740 50+NT$710.250 100+NT$652.760 其他價格... | Single | N Channel | 116A | 900V | 0.016ohm | TO-247 | 4Pins | 18V | 4.3V | 484W | 175°C | EliteSiC Series | ||||||
