CY7C1049GN30-10VXI

CY7C1049GN30-10VXI is a high-performance CMOS fast static RAM device organized as 512K words by 8-bits. Data write is performed by asserting the chip enable (active low CE) and write enable (active low WE) inputs LOW, while providing the data on I/O0 through I/O7 and address on A0 through A18 pins. Data read is performed by asserting the chip enable (active low CE) and output enable (active low OE) inputs LOW and providing the required address on the address lines. Read data is accessible on the I/O lines (I/O0 through I/O7). Application includes human machine interface.

• 4-Mbit density, × 8-bits data width, 65nm process technology
• 10ns speed, voltage range from 2.2 to 3.6V
• Operating ICC range from 38mA typ (f=fmax.,TA=25°C, VCC=3V)
• Automatic CE power-down current – CMOS inputs is 6mA typ (Max VCC, 0.2V)
• 1.0V data retention, TTL-compatible inputs and outputs
• Input capacitance is 10pF (TA=25°C, f=1MHz, VCC=VCC(typ)
• I/O capacitance is 10pF (TA=25°C, f=1MHz, VCC=VCC(typ)
• VCC for data retention is 1V min (-40°C to 85°C)
• 36-pin moulded SOJ package, operating industrial temperature range from -40 to +85°C