FM28V100-TG

FM28V100-TG is a 128K × 8 non-volatile F-RAM memory that reads and writes similar to a standard SRAM. A ferroelectric random access memory or F-RAM is non-volatile, which means that data is retained after power is removed. It provides data retention for over 151 years while eliminating the reliability concerns, functional disadvantages, and system design complexities of battery-backed SRAM (BBSRAM). Fast write timing and high write endurance make the F-RAM superior to other types of memory. The FM28V100 operation is similar to that of other RAM device and therefore, it can be used as a drop-in replacement for a standard SRAM in a system. Read and write cycles may be triggered by chip enable or simply by changing the address. The F-RAM memory is non-volatile due to its unique ferroelectric memory process.

• Power supply voltage range from 2.0V to 3.6V, 1Mbit density
• 1-Mbit ferroelectric random access memory (F-RAM) logically organized as 128K × 8
• High-endurance 100 trillion read/writes, 151-year data retention
• No Delay™ writes, page mode operation to 30ns cycle time
• Industry-standard 128K × 8 SRAM pinout, VDD supply current is 7mA typ (VDD=3.6V)
• Chip enable access time is 60ns max (VDD=2.7V to 3.6V)
• Read cycle time is 90ns min (VDD=2.7V to 3.6V)
• No battery concerns, monolithic reliability, true surface mount solution, no rework steps
• Superior for moisture, shock, and vibration
• 32-pin TSOP I package, industrial operating range -40 to +85°C