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| 數量 | 價格 |
|---|---|
| 1+ | NT$483.490 |
| 10+ | NT$449.960 |
| 25+ | NT$436.810 |
| 50+ | NT$426.620 |
| 100+ | NT$417.710 |
| 250+ | NT$404.550 |
產品訊息
S29GL256P90FFIR20 的替代選擇
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產品總覽
The S29GL256P90FFIR20 is a 128Mbit 3V, page flash with 90nm MirrorBit process technology in 64 fortified pin BGA package. This device offers a fast page access time of 25ns with a corresponding random access time as fast as 90ns at regulated VCC. It features a write buffer that allows a maximum of 32 words/64 bytes to be programmed in one operation, resulting in faster effective programming time than standard programming algorithms. It makes device ideal for today’s embedded applications that require higher density, better performance and lower power consumption. It has an uniform 64Kword/128Kbyte sector architecture with two hundred fifty-six sectors, hardware reset input (RESET#) resets device and ready/busy# output (RY/BY#) detects program or erase cycle completion.
- VIO = VCC = 3V to 3.6V, lowest address sector protected
- 8-word/16-byte page read buffer
- 100000 erase cycles per sector typical and 20year data retention typical
- Write operation status bits indicate program and erase operation completion
- Unlock bypass program command to reduce programming time
- Support for CFI (Common Flash Interface)
- Persistent and password methods of advanced sector protection
- Suspend and resume commands for program and erase operations
- Industrial temperature range from -40°C to +85°C
- WP#/ACC input, protects first or last sector regardless of sector protection settings
應用
Embedded Design & Development
技術規格
Parallel NOR
32M x 8bit
BGA
-
3V
3V
-40°C
3V Parallel NOR Flash Memories
No SVHC (23-Jan-2024)
256Mbit
Parallel
64Pins
90ns
3.6V
Surface Mount
85°C
MSL 3 - 168 hours
法規與環境保護
承擔產品生產最後程序之國家原產地:United States
承擔產品生產最後程序之國家
RoHS
RoHS
產品合規憑證