S29GL512S11TFIV10

S29GL512S11TFIV10 is a MIRRORBIT™ flash memory fabricated on 65-nm process technology. It offers a fast page access time as fast as 15ns with a corresponding random access time as fast as 90ns. It features a Write Buffer that allows a maximum of 256 words/512 bytes to be programmed in one operation, resulting in faster effective programming time than standard programming algorithms. It makes this device ideal for today’s embedded applications that require higher density, better performance and lower power consumption.

• 110ns random access time speed, CMOS 3.0V core with versatile I/O
• VIO=1.65V to VCC, VCC=2.7V to 3.6V, highest address sector protected
• Single supply (VCC) for read / program / erase (2.7V to 3.6V)
• Versatile I/O feature - wide I/O voltage range (VIO) 1.65V to VCC
• ×16 data bus, asynchronous 32-byte page read
• Automatic error checking and correction (ECC) internal hardware ECC with single bit error correction
• Suspend and resume commands for program and erase operations
• Status register, data polling, and ready/busy pin methods to determine device status
• 100,000 program/erase cycles, 20-year data retention
• TSOP package, industrial temperature range from -40°C to +85°C