BS170F

BS170F is a N-channel enhancement mode vertical MOSFET. This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) yet maintain superior switching performance, making it ideal for high-efficiency power-management and motor controls applications.

• Low on-resistance, low gate threshold voltage
• Low input capacitance, fast switching speed, small surface-mount package
• Drain-source voltage is 60V at TA = +25°C
• Continuous drain current at TA = +25°C is 0.15A
• Pulsed drain current is 3A at TA = +25°C
• Gate source voltage is ±20V at TA = +25°C
• Power dissipation at TA = +25°C is 330mW
• Static drain-source on-state resistance is 5ohm max at VGS = 10V, ID = 200mA, TA = +25°C
• SOT23 package
• Operating and storage temperature range from -55 to +150°C