BSS123-7-F

BSS123-7-F is a N-channel enhancement mode field effect transistor. It is produced using Diodes Incorporated’s proprietary, high density and advanced trench technology. This product has been designed to minimize on-state resistance while providing rugged, reliable and fast switching performance. This product is particularly suited for low-voltage, low-current applications such as small servo motor controls, power MOSFET gate drivers, switching applications.

• Low gate threshold voltage, low input capacitance, fast switching speed
• Low input/output leakage, high drain-source voltage rating
• Drain-source voltage is 100V at TA = +25°C
• Continuous gate-source voltage is ±20V at TA=+25°C, VGS = 10V
• Pulsed continuous drain current is 0.68A at TA=+25°C, VGS = 10V
• Power dissipation is 300mW at TA = +25°C
• Static drain-source on-resistance is 3.2ohm typ at VGS = 10V, ID = 0.17A, TA = +25°C
• Drain-source breakdown voltage is 100V min at VGS = 0V, ID = 250µA, TA = +25°C
• SOT23 package
• Operating and storage temperature range from -55 to +150°C