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包裝選項
| 包裝類型 | 數量 | 單價: | 總計 |
|---|---|---|---|
| 條帶式包裝 | 5 | NT$7.640 | NT$38.20 |
| 總計 價格 | NT$38.20 | ||
條帶式包裝 & 複捲式
| 數量 | 價格 |
|---|---|
| 5+ | NT$7.640 |
| 50+ | NT$6.360 |
| 100+ | NT$5.080 |
| 500+ | NT$3.090 |
| 1500+ | NT$3.030 |
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商DIODES INC.
製造商產品編號BSS84W-7-F复制
製造商標準前置時間43 週
訂購代碼
複捲式1713836RL
條帶式包裝1713836
技術資料表
Channel TypeP Channel
Drain Source Voltage Vds50V
Continuous Drain Current Id130mA
Drain Source On State Resistance10ohm
Transistor Case StyleSOT-323
Transistor MountingSurface Mount
Rds(on) Test Voltage5V
Gate Source Threshold Voltage Max1.6V
Power Dissipation200mW
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (25-Jun-2025)
產品總覽
The BSS84W-7-F is a P-channel enhancement-mode FET with moulded plastic case and solderable matte tin annealed over alloy 42 lead-frame terminals as per MIL-STD-202 standard. It is designed to minimize the ON-state resistance RDS (ON) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
- Low ON-resistance
- Low gate threshold voltage
- Low input capacitance
- Fast switching speed
- Halogen-free, Green device
- Moisture sensitivity level 1 as per J-STD-020
- UL94V-0 Flammability rating
應用
Power Management, Aerospace, Defence, Military
技術規格
Channel Type
P Channel
Continuous Drain Current Id
130mA
Transistor Case Style
SOT-323
Rds(on) Test Voltage
5V
Power Dissipation
200mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds
50V
Drain Source On State Resistance
10ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1.6V
No. of Pins
3Pins
Product Range
-
MSL
-
法規與環境保護
原產地:
承擔產品生產最後程序之國家原產地:China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地:China
承擔產品生產最後程序之國家
關稅編號:85412100
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定:是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (25-Jun-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤):.000006

