列印頁面
BSS84W-7-F
Power MOSFET, P Channel, 50 V, 130 mA, 10 ohm, SOT-323, Surface Mount
產品訊息
製造商DIODES INC.
製造商產品編號BSS84W-7-F
訂購代碼1713836RL
技術資料表
Channel TypeP Channel
Drain Source Voltage Vds50V
Continuous Drain Current Id130mA
Drain Source On State Resistance10ohm
Transistor Case StyleSOT-323
Transistor MountingSurface Mount
Rds(on) Test Voltage5V
Gate Source Threshold Voltage Max1.6V
Power Dissipation200mW
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (25-Jun-2025)
產品總覽
The BSS84W-7-F is a P-channel enhancement-mode FET with moulded plastic case and solderable matte tin annealed over alloy 42 lead-frame terminals as per MIL-STD-202 standard. It is designed to minimize the ON-state resistance RDS (ON) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.
- Low ON-resistance
- Low gate threshold voltage
- Low input capacitance
- Fast switching speed
- Halogen-free, Green device
- Moisture sensitivity level 1 as per J-STD-020
- UL94V-0 Flammability rating
應用
Power Management, Aerospace, Defence, Military
技術規格
Channel Type
P Channel
Continuous Drain Current Id
130mA
Transistor Case Style
SOT-323
Rds(on) Test Voltage
5V
Power Dissipation
200mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds
50V
Drain Source On State Resistance
10ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1.6V
No. of Pins
3Pins
Product Range
-
MSL
-
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85412100
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (25-Jun-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.000006