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DMC2053UFDB-7
Dual MOSFET, Complementary N and P Channel, 20 V, 20 V, 4.6 A, 4.6 A, 0.035 ohm
產品訊息
製造商DIODES INC.
製造商產品編號DMC2053UFDB-7
訂購代碼3828398RL
技術資料表
Transistor PolarityComplementary N and P Channel
Channel TypeComplementary N and P Channel
Drain Source Voltage Vds20V
Drain Source Voltage Vds N Channel20V
Continuous Drain Current Id4.6A
Drain Source Voltage Vds P Channel20V
On Resistance Rds(on)0.024ohm
Continuous Drain Current Id N Channel4.6A
Continuous Drain Current Id P Channel4.6A
Transistor MountingSurface Mount
Drain Source On State Resistance N Channel0.035ohm
Rds(on) Test Voltage4.5V
Drain Source On State Resistance P Channel0.075ohm
Transistor Case StyleU-DFN2020
Gate Source Threshold Voltage Max1V
No. of Pins6Pins
Power Dissipation Pd1.14W
Power Dissipation N Channel1.14W
Power Dissipation P Channel1.14W
Operating Temperature Max150°C
Product Range-
Qualification-
Automotive Qualification Standard-
SVHCNo SVHC (27-Jun-2024)
技術規格
Transistor Polarity
Complementary N and P Channel
Drain Source Voltage Vds
20V
Continuous Drain Current Id
4.6A
On Resistance Rds(on)
0.024ohm
Continuous Drain Current Id P Channel
4.6A
Drain Source On State Resistance N Channel
0.035ohm
Drain Source On State Resistance P Channel
0.075ohm
Gate Source Threshold Voltage Max
1V
Power Dissipation Pd
1.14W
Power Dissipation P Channel
1.14W
Product Range
-
Automotive Qualification Standard
-
SVHC
No SVHC (27-Jun-2024)
Channel Type
Complementary N and P Channel
Drain Source Voltage Vds N Channel
20V
Drain Source Voltage Vds P Channel
20V
Continuous Drain Current Id N Channel
4.6A
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
4.5V
Transistor Case Style
U-DFN2020
No. of Pins
6Pins
Power Dissipation N Channel
1.14W
Operating Temperature Max
150°C
Qualification
-
MSL
MSL 1 - Unlimited
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (27-Jun-2024)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.0001