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DMG6602SVT
Dual MOSFET, Complementary N and P Channel, 30 V, 30 V, 3.4 A, 2.8 A, 0.06 ohm
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28,975 件可于 3-4 個工作日後配送(英國 件庫存)
| 數量 | 價格 |
|---|---|
| 5+ | NT$14.330 |
| 10+ | NT$10.550 |
| 100+ | NT$7.070 |
| 500+ | NT$4.890 |
| 1000+ | NT$4.190 |
| 5000+ | NT$3.330 |
價格Each
最少: 5
多項: 5
NT$71.65
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商DIODES INC.
製造商產品編號DMG6602SVT复制
製造商標準前置時間12 週
訂購代碼2061522
技術資料表
Channel TypeComplementary N and P Channel
Drain Source Voltage Vds N Channel30V
Drain Source Voltage Vds P Channel30V
Continuous Drain Current Id N Channel3.4A
Continuous Drain Current Id P Channel2.8A
Drain Source On State Resistance N Channel0.06ohm
Drain Source On State Resistance P Channel0.095ohm
Transistor Case StyleTSOT-26
No. of Pins6Pins
Power Dissipation N Channel840mW
Power Dissipation P Channel840mW
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (04-Feb-2026)
產品總覽
DMG6602SVT is a complementary pair enhancement mode MOSFET. This new generation MOSFET is designed to minimize the on-state resistance (RDS(on)) yet maintain superior switching performance, making it ideal for high-efficiency power management applications. Typical applications include backlighting, DC-DC converters, power management functions.
- Low input capacitance, low on-resistance
- Fast switching speed, low input/output leakage
- Drain source voltage is 30V at TA = +25°C (P/N channel)
- Continuous drain current is 3.4A at TA = +25°C (P/N channel)
- Drain source on state resistance is 0.038ohm at TA = +25°C (P/N channel)
- Power dissipation is 1.12W at TA = +25°C (P/N channel)
- Gate-source voltage is ±20V at TA = +25°C (P/N channel)
- TSOT26 case
- Operating and storage temperature range from -55 to +150°C
技術規格
Channel Type
Complementary N and P Channel
Drain Source Voltage Vds P Channel
30V
Continuous Drain Current Id P Channel
2.8A
Drain Source On State Resistance P Channel
0.095ohm
No. of Pins
6Pins
Power Dissipation P Channel
840mW
Product Range
-
MSL
-
Drain Source Voltage Vds N Channel
30V
Continuous Drain Current Id N Channel
3.4A
Drain Source On State Resistance N Channel
0.06ohm
Transistor Case Style
TSOT-26
Power Dissipation N Channel
840mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (04-Feb-2026)
技術文件 (1)
相關產品
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法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (04-Feb-2026)
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產品合規憑證
重量 (公斤)：.000027