DMN2058UW-7

DMN2058UW-7 is a N-channel enhancement mode MOSFET. This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and maintain superior switching performance, making it ideal for high-efficiency power management applications. Typical applications include motor controls, power-management functions, and backlighting.

• Low on-resistance, low input capacitance
• Fast switching speed, low input/output leakage
• Drain-source voltage is 20V at TA = +25°C
• Gate-source voltage is ±12V at TA = +25°C
• Continuous drain current is 3.5A at TA = +25°C, VGS = 10V, steady state
• Pulsed drain current (10µs pulse, duty cycle = 1%) is 20A at TA = +25°C
• Total power dissipation is 0.5mW at TA = +25°C
• Maximum continuous body diode forward current is 1A at TA = +25°C
• SOT323 case
• Operating and storage temperature range from -55 to +150°C