DMN2310U-7

DMN2310U-7 is a N-channel enhancement mode MOSFET. This new generation MOSFET has been designed to minimize the on state resistance (RDS(ON)) and maintain superior switching performance, making it ideal for high efficiency power management applications and load switches.

• Low gate threshold voltage
• Fast switching speed, ESD protected gate
• Drain-source voltage is 20V at TA = +25°C
• Gate-source voltage is ±8V at TA = +25°C
• Continuous drain current is 1.6A at TA = +25°C, VGS = 4.5V, steady state
• Pulsed drain current (10µs pulse, duty cycle = 1%) is 4.8A at TA = +25°C
• Total power dissipation is 0.48W at TA = +25°C
• Maximum continuous body diode forward current is 0.82A at TA = +25°C
• SOT23 case
• Operating and storage temperature range from -55 to +150°C