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ZXMC10A816N8TC
Dual MOSFET, Complementary N and P Channel, 100 V, 100 V, 2.1 A, 2.1 A, 0.23 ohm
產品訊息
製造商DIODES INC.
製造商產品編號ZXMC10A816N8TC
訂購代碼3405249RL
技術資料表
Transistor PolarityComplementary N and P Channel
Channel TypeComplementary N and P Channel
Drain Source Voltage Vds100V
Drain Source Voltage Vds N Channel100V
Continuous Drain Current Id2.1A
Drain Source Voltage Vds P Channel100V
On Resistance Rds(on)0.17ohm
Continuous Drain Current Id N Channel2.1A
Continuous Drain Current Id P Channel2.1A
Transistor MountingSurface Mount
Drain Source On State Resistance N Channel0.23ohm
Rds(on) Test Voltage10V
Drain Source On State Resistance P Channel0.235ohm
Transistor Case StyleSOIC
Gate Source Threshold Voltage Max3V
No. of Pins8Pins
Power Dissipation Pd2.1W
Power Dissipation N Channel2.1W
Power Dissipation P Channel2.1W
Operating Temperature Max150°C
Product Range-
Qualification-
Automotive Qualification Standard-
SVHCNo SVHC (27-Jun-2024)
技術規格
Transistor Polarity
Complementary N and P Channel
Drain Source Voltage Vds
100V
Continuous Drain Current Id
2.1A
On Resistance Rds(on)
0.17ohm
Continuous Drain Current Id P Channel
2.1A
Drain Source On State Resistance N Channel
0.23ohm
Drain Source On State Resistance P Channel
0.235ohm
Gate Source Threshold Voltage Max
3V
Power Dissipation Pd
2.1W
Power Dissipation P Channel
2.1W
Product Range
-
Automotive Qualification Standard
-
SVHC
No SVHC (27-Jun-2024)
Channel Type
Complementary N and P Channel
Drain Source Voltage Vds N Channel
100V
Drain Source Voltage Vds P Channel
100V
Continuous Drain Current Id N Channel
2.1A
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Transistor Case Style
SOIC
No. of Pins
8Pins
Power Dissipation N Channel
2.1W
Operating Temperature Max
150°C
Qualification
-
MSL
MSL 1 - Unlimited
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (27-Jun-2024)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.0002