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ZXMC4559DN8TA
Dual MOSFET, Complementary N and P Channel, 60 V, 60 V, 3.9 A, 3.9 A, 0.105 ohm
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產品訊息
製造商DIODES INC.
製造商產品編號ZXMC4559DN8TA复制
訂購代碼
複捲式1471155RL
條帶式包裝1471155
技術資料表
Channel TypeComplementary N and P Channel
Drain Source Voltage Vds N Channel60V
Drain Source Voltage Vds P Channel60V
Continuous Drain Current Id N Channel3.9A
Continuous Drain Current Id P Channel3.9A
Transistor Case StyleSOIC
No. of Pins8Pins
Power Dissipation N Channel2.1W
Power Dissipation P Channel2.1W
Operating Temperature Max150°C
Product Range-
Qualification-
ZXMC4559DN8TA 的替代選擇
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The ZXMC4559DN8TA is a N/P-channel complementary Pair enhancement-mode MOSFET been designed to minimize the ON-state resistance RDS (ON) and yet maintain superior switching performance. It is ideal for DC-to-DC converters and LCD backlighting applications.
- Low input capacitance
- Low ON-resistance
- Fast switching speed
- Halogen-free
- UL94V-0 Flammability rating
- Qualified to AEC-Q101 standards for high reliability
應用
Industrial, Power Management, Automotive
技術規格
Channel Type
Complementary N and P Channel
Drain Source Voltage Vds P Channel
60V
Continuous Drain Current Id P Channel
3.9A
No. of Pins
8Pins
Power Dissipation P Channel
2.1W
Product Range
-
Drain Source Voltage Vds N Channel
60V
Continuous Drain Current Id N Channel
3.9A
Transistor Case Style
SOIC
Power Dissipation N Channel
2.1W
Operating Temperature Max
150°C
Qualification
-
相關產品
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法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:待通知
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產品合規憑證
重量 (公斤)：.000273