Print Page
IRLI640GPBF.
Power MOSFET, N Channel, 200 V, 9.8 A, 0.18 ohm, TO-220FP, Through Hole
Image is for illustrative purposes only. Please refer to product description.
ManufacturerVISHAY
Manufacturer Part NoIRLI640GPBF.
Order Code8660042
Your Part Number
Technical Datasheet
No Longer Stocked
Product Information
ManufacturerVISHAY
Manufacturer Part NoIRLI640GPBF.
Order Code8660042
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds200V
Continuous Drain Current Id9.8A
Drain Source On State Resistance0.18ohm
Transistor Case StyleTO-220FP
Transistor MountingThrough Hole
Rds(on) Test Voltage5V
Gate Source Threshold Voltage Max2V
Power Dissipation40W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
Alternatives for IRLI640GPBF.
1 Product Found
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
9.8A
Transistor Case Style
TO-220FP
Rds(on) Test Voltage
5V
Power Dissipation
40W
Operating Temperature Max
150°C
Qualification
-
Drain Source Voltage Vds
200V
Drain Source On State Resistance
0.18ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
2V
No. of Pins
3Pins
Product Range
-
Technical Docs (1)
Associated Products
3 Products Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Great Britain
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Great Britain
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.002