NV6512C-RA

NV6512C-RA is a power IC. It is a thermally-enhanced bottom-cooled SMD version of the GaNFast™ power IC family, optimized for higher power systems using GaNSafe™ technology, making it the ideal choice for high-frequency, high-power-density, and high efficiency power systems in data centre, solar, industrial, and automotive segments. The GaNFast power IC integrates GaN FET(s) with gate drive to create an easy-to-use power stage building block. The GaNSafe technology further integrates critical protection and performance features that enable unprecedented reliability and robustness. Applications/topologies include AC-DC, DC-DC, CCM or CrM TP-PFC, optimized for synchronous half-bridge, full bridge, 3-phase, or buck/boost operation, data centre CRPS, and solar inverter/ESS, EV OBC and DC-DC converter, and motor drive.

• Paralleling capability up to 2x power ICs
• Zero reverse-recovery charge, 2kV ESD all pins
• Turn-ON and Turn-OFF dV/dt programmability
• VDS: 650V continuous / 800V transient
• Drain-source leakage current is 2.0µA typ at VDS = 650V, VDRIVE = 0V
• Drain-source resistance is 40mohm typ at VDRIVE = 15V, IDS = 13A
• JEDEC and IPC-9701 qualifications
• dV/dt immunity up to 100V/ns
• TOLL-4L bottom-cooled SMD package
• Junction temperature range from -40 to +150°C