G2R1000MT17J

G2R1000MT17J is a N-channel enhancement mode silicon carbide MOSFET. Application includes auxiliary power supply, solar inverters (string and central), infrastructure chargers, industrial motors (AC Servos), general purpose inverters, pulsed power, piezo drivers, and Ion beam generators.

• G2R™ technology, softer R v/s temperature dependency, LoRing™ electromagnetically optimized design
• Smaller R and lower QG, low device capacitances, industry-leading UIL and short-circuit robustness
• Robust body diode with low V and low QRR, optimized package with separate driver source pin
• Compatible with commercial gate drivers, low conduction losses at all temperature
• Reduced ringing, faster and more efficient switching, lesser switching spikes and lower losses
• Better power density and system efficiency, ease of paralleling without thermal runway
• Superior robustness and system reliability
• Drain-source voltage is 1700V (V = 0V, I = 100µA), power dissipation is 44W (TC=-25°C)
• 1000Mohm drain-source on-state resistance (typ, VGS=20V, ID=2A), 3A ID (TC = 100°C)
• 7pin TO-263-7 package, operating and storage temperature range from -55 to 175°C