2ED2388S06FXUMA1

2ED2388S06FXUMA1 is a 650V half bridge gate driver with an integrated bootstrap diode. It is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels. Based on Infineon’s SOI-technology there is an excellent ruggedness and noise immunity with capability to maintain operational logic at negative voltages of up to - 11VDC on VS pin (VCC = 15V) on transient voltages. There are not any parasitic thyristor structures present in the device, hence no parasitic latch up may occur at all temperature and voltage conditions. The logic input is compatible with standard CMOS or LSTTL output, down to 3.3V logic. The output driver features a high pulse current buffer stage designed for minimum driver cross-conduction. Potential Applications include lighting and controls, industrial Lighting (high power), motor control, general purpose inverter.

• Unique Infineon thin-film-silicon on insulator (SOI)-technology
• Negative VS transient immunity of -100V, floating channel designed for bootstrap operation
• High-side floating well supply return voltage is 650V
• Peak output current turn-on is 290mA typ (VO = 0V, PW ≤ 10µs, TA = 25°C)
• Peak output current turn-off is 700mA typ (VO = 0V, PW ≤ 10µs, TA = 25°C)
• Supply voltage range from 10V to 20V
• Turn-on propagation delay is 90ns typ (Vin = 5V, VS = 0V, TA = 25°C)
• Dead time is 100ns typ (Vin = 5V, VS = 0V, TA = 25°C)
• Negative voltage tolerance on inputs of -5V, independent under voltage lockout for both channels
• DSO – 8 package, ambient temperature range from -40 to 125°C