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AUIRFN8459TR
Dual MOSFET, N Channel, 40 V, 40 V, 50 A, 50 A, 4800 µohm
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不再生產
產品訊息
製造商INFINEON
製造商產品編號AUIRFN8459TR复制
訂購代碼2726087
Product RangeHEXFET Series
其他名稱SP001517406
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds N Channel40V
Drain Source Voltage Vds P Channel40V
Continuous Drain Current Id N Channel50A
Continuous Drain Current Id P Channel50A
Drain Source On State Resistance N Channel4800µohm
Drain Source On State Resistance P Channel4800µohm
Transistor Case StylePQFN
No. of Pins8Pins
Power Dissipation N Channel50W
Power Dissipation P Channel50W
Operating Temperature Max175°C
Product RangeHEXFET Series
QualificationAEC-Q101
SVHCNo SVHC (21-Jan-2025)
AUIRFN8459TR 的替代選擇
找到 1 個產品
產品總覽
- Automotive HEXFET® power MOSFET
- Automotive qualified
- Advanced planar technology
- Ultra-low on-resistance
- Fast switching
- Dual N channel MOSFET
- Repetitive Avalanche Allowed up to Tjmax
警告
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
技術規格
Channel Type
N Channel
Drain Source Voltage Vds P Channel
40V
Continuous Drain Current Id P Channel
50A
Drain Source On State Resistance P Channel
4800µohm
No. of Pins
8Pins
Power Dissipation P Channel
50W
Product Range
HEXFET Series
MSL
MSL 1 - Unlimited
Drain Source Voltage Vds N Channel
40V
Continuous Drain Current Id N Channel
50A
Drain Source On State Resistance N Channel
4800µohm
Transistor Case Style
PQFN
Power Dissipation N Channel
50W
Operating Temperature Max
175°C
Qualification
AEC-Q101
SVHC
No SVHC (21-Jan-2025)
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (21-Jan-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.000179