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| 數量 | 價格 |
|---|---|
| 1+ | NT$17.070 |
| 10+ | NT$10.810 |
| 100+ | NT$8.750 |
| 500+ | NT$8.080 |
| 1000+ | NT$7.820 |
| 5000+ | NT$7.320 |
價格Each (Supplied on Cut Tape)
最少: 1
多項: 1
NT$17.07
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商INFINEON
製造商產品編號BAR81WH6327XTSA1复制
製造商標準前置時間28 週
訂購代碼2480904
Product RangeBAR81
其他名稱BAR 81W H6327, SP000743450
技術資料表
Diode ConfigurationSingle
Resistance @ If1ohm
Reverse Voltage30V
Diode Case StyleSOT-343
No. of Pins4 Pin
Diode Capacitance0.9pF
Forward Current100mA
Operating Temperature Max125°C
Forward Voltage1V
Power Dissipation100mW
Diode MountingSurface Mount
Product RangeBAR81
SVHCNo SVHC (25-Jun-2025)
產品總覽
The BAR 81W H6327 is a Silicon RF Switching Diode with shunt-diode configuration. It is designed for use in shunt configuration in high performance RF switches.
- High shunt signal isolation
- Low shunt insertion loss
- Optimized for short - open transformation using λ/4 lines
- -55 to 125°C Operating temperature range
應用
RF Communications, Power Management, Industrial
技術規格
Diode Configuration
Single
Reverse Voltage
30V
No. of Pins
4 Pin
Forward Current
100mA
Forward Voltage
1V
Diode Mounting
Surface Mount
SVHC
No SVHC (25-Jun-2025)
Resistance @ If
1ohm
Diode Case Style
SOT-343
Diode Capacitance
0.9pF
Operating Temperature Max
125°C
Power Dissipation
100mW
Product Range
BAR81
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85411000
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (25-Jun-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.000048