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BSB044N08NN3GXUMA1
Power MOSFET, N Channel, 80 V, 90 A, 3700 µohm, WDSON, Surface Mount
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不再生產
產品訊息
製造商INFINEON
製造商產品編號BSB044N08NN3GXUMA1复制
訂購代碼2443368
其他名稱BSB044N08NN3 G, SP000604542
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds80V
Continuous Drain Current Id90A
Drain Source On State Resistance3700µohm
Transistor Case StyleWDSON
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2.8V
Power Dissipation78W
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (23-Jan-2024)
產品總覽
The BSB044N08NN3 G is a N-channel Power MOSFET with performance leading benchmark OptiMOS™ technology. It is the market leader in highly efficient solutions for power generation, power supply and power consumption applications.
- Optimized technology for DC-to-DC converters
- Excellent gate charge x RDS (ON) product (FOM)
- Superior thermal resistance
- Dual sided cooling
- Low parasitic inductance
- Low profile
- Normal level
- 100% avalanche tested
- Qualified according to JEDEC for target applications
- Compatible with DirectFET® package MN footprint and outline
- Green device
應用
Power Management, Consumer Electronics, Communications & Networking, Motor Drive & Control, LED Lighting, Automotive, Alternative Energy
技術規格
Channel Type
N Channel
Continuous Drain Current Id
90A
Transistor Case Style
WDSON
Rds(on) Test Voltage
10V
Power Dissipation
78W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (23-Jan-2024)
Drain Source Voltage Vds
80V
Drain Source On State Resistance
3700µohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
2.8V
No. of Pins
3Pins
Product Range
-
MSL
MSL 3 - 168 hours
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：Malaysia
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：Malaysia
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (23-Jan-2024)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.003629