BSC014N04LSTATMA1

BSC014N04LSTATMA1 is an OptiMOS™ 5 power MOSFET with an enhanced temperature rating for improved robustness. It offers the latest technology together with temperature improvements in the package. This new combination enables higher power density as well as improved robustness. Compared to lower-rated devices, the 175°C TJ-MAX feature offers either more power at a higher operating junction temperature or a longer lifetime at the same operating junction temperature. Furthermore, a 20% improvement in the safe operating area (SOA) is achieved. This new package feature is the perfect fit for applications such as telecom, motor drives and servers.

• Very low on-state resistance RDS(on), optimized for synchronous rectification
• Longer life time, highest efficiency and power density
• Highest system reliability, thermal robustness
• 100% avalanche tested, superior thermal resistance
• Qualified according to JEDEC for target applications
• Higher solder joint reliability due to enlarged source interconnection
• Continuous drain current is 205A at VGS=10V, TC=25°C
• Gate source voltage is 20V maximum
• Drain-source on-state resistance is 1.5mohm typ at VGS=4.5V, ID=50A
• Operating and storage temperature range from -55 to 175°C, TDSON-8 FL package