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BSC042N03LSGATMA1
Power MOSFET, N Channel, 30 V, 93 A, 4200 µohm, PG-TDSON, Surface Mount
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可供訂購
製造商標準交貨時間：52 週
有貨時通知我
| 數量 | 價格 |
|---|---|
| 1+ | NT$51.000 |
| 10+ | NT$32.060 |
| 100+ | NT$21.280 |
| 500+ | NT$16.620 |
| 1000+ | NT$13.890 |
| 5000+ | NT$12.640 |
價格Each
最少: 1
多項: 1
NT$51.00
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商INFINEON
製造商產品編號BSC042N03LSGATMA1复制
製造商標準前置時間52 週
訂購代碼1775440
其他名稱BSC042N03LS G, SP000302864
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id93A
Drain Source On State Resistance4200µohm
Transistor Case StylePG-TDSON
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max1V
Power Dissipation57W
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (25-Jun-2025)
產品總覽
The BSC042N03LS G is an OptiMOS™3 Power MOSFET features optimized technology for DC-to-DC converters.
- Fast switching MOSFET for SMPS
- Qualified according to JEDEC for target applications
- Logic level
- Excellent gate charge x RDS (ON) product (FOM)
- Very low ON-resistance RDS (ON)
- Superior thermal resistance
- Avalanche rated
- Halogen-free, Green device
應用
Power Management, Industrial
警告
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
技術規格
Channel Type
N Channel
Continuous Drain Current Id
93A
Transistor Case Style
PG-TDSON
Rds(on) Test Voltage
10V
Power Dissipation
57W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds
30V
Drain Source On State Resistance
4200µohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1V
No. of Pins
8Pins
Product Range
-
MSL
MSL 1 - Unlimited
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：Malaysia
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：Malaysia
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (25-Jun-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.000205