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BSC120N03MSGATMA1
Power MOSFET, N Channel, 30 V, 39 A, 0.012 ohm, PG-TDSON, Surface Mount
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| 數量 | 價格 |
|---|---|
| 1+ | NT$38.490 |
| 10+ | NT$27.490 |
| 100+ | NT$17.110 |
| 500+ | NT$11.820 |
| 1000+ | NT$8.900 |
| 5000+ | NT$7.600 |
價格Each
最少: 1
多項: 1
NT$38.49
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商INFINEON
製造商產品編號BSC120N03MSGATMA1复制
製造商標準前置時間16 週
訂購代碼1775468
其他名稱BSC120N03MS G, SP000311516
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id39A
Drain Source On State Resistance0.012ohm
Transistor Case StylePG-TDSON
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max1V
Power Dissipation28W
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (21-Jan-2025)
BSC120N03MSGATMA1 的替代選擇
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產品總覽
The BSC120N03MS G is an OptiMOS™ N-channel Power MOSFET sets new standards in power density and energy efficiency. It is tailored to the needs of power management by improved EMI behaviour, as well as increased battery life. It is available in half-bridge configuration.
- Easy to design in
- Increased battery lifetime
- Improved EMI behaviour making external snubber networks obsolete
- Saving space
- Reducing power losses
- Fast switching MOSFET for SMPS
- Optimized for 5V driver application
- Low FOMSW for high frequency SMPS
- 100% Avalanche tested
- Very low ON-resistance RDS (ON) @ VGS = 4.5V
- Excellent gate charge x RDS (ON) product (FOM)
- Qualified according to JEDEC for target applications
- Superior thermal resistance
- Halogen-free, Green device
應用
Power Management, Motor Drive & Control, LED Lighting, Computers & Computer Peripherals, Portable Devices, Consumer Electronics
警告
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
技術規格
Channel Type
N Channel
Continuous Drain Current Id
39A
Transistor Case Style
PG-TDSON
Rds(on) Test Voltage
10V
Power Dissipation
28W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Drain Source Voltage Vds
30V
Drain Source On State Resistance
0.012ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1V
No. of Pins
8Pins
Product Range
-
MSL
MSL 1 - Unlimited
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：Malaysia
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：Malaysia
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (21-Jan-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.000605