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BSO080P03SHXUMA1
Power MOSFET, P Channel, 30 V, 12.6 A, 6700 µohm, SOIC, Surface Mount
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| 數量 | 價格 |
|---|---|
| 1+ | NT$88.820 |
| 10+ | NT$57.410 |
| 100+ | NT$39.180 |
| 500+ | NT$35.910 |
| 1000+ | NT$32.630 |
| 5000+ | NT$28.480 |
價格Each (Supplied on Cut Tape)
最少: 1
多項: 1
NT$88.82
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商INFINEON
製造商產品編號BSO080P03SHXUMA1复制
製造商標準前置時間21 週
訂購代碼2480750
其他名稱BSO080P03S H, SP000613798
技術資料表
Channel TypeP Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id12.6A
Drain Source On State Resistance6700µohm
Transistor Case StyleSOIC
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max1.5V
Power Dissipation1.79W
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
QualificationAEC-Q101
SVHCNo SVHC (25-Jun-2025)
BSO080P03SHXUMA1 的替代選擇
找到 1 個產品
產品總覽
The BSO080P03S H is an OptiMOS™ P-channel Power MOSFET consistently meets the highest quality and performance demands in key specifications for power system design such as ON-state resistance and figure of merit characteristics.
- Enhancement-mode
- Logic level
- Avalanche rated
- Qualified to JEDEC for target applications
- Halogen-free, Green device
應用
Power Management, Motor Drive & Control, Consumer Electronics, Portable Devices, Computers & Computer Peripherals
技術規格
Channel Type
P Channel
Continuous Drain Current Id
12.6A
Transistor Case Style
SOIC
Rds(on) Test Voltage
10V
Power Dissipation
1.79W
Operating Temperature Max
150°C
Qualification
AEC-Q101
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds
30V
Drain Source On State Resistance
6700µohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1.5V
No. of Pins
8Pins
Product Range
-
MSL
MSL 3 - 168 hours
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (25-Jun-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.004536