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BSO150N03MDGXUMA1
Dual MOSFET, N Channel, 30 V, 30 V, 8 A, 8 A, 0.015 ohm
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製造商INFINEON
製造商產品編號BSO150N03MDGXUMA1复制
製造商標準前置時間15 週
訂購代碼
複捲式2480752RL
條帶式包裝2480752
其他名稱BSO150N03MD G, SP000447476
您的零件号
897 有存貨
需要更多？
897 件可于 3-4 個工作日後配送(英國 件庫存)
包裝選項
| 包裝類型 | 數量 | 單價: | 總計 |
|---|---|---|---|
| 條帶式包裝 | 1 | NT$61.140 | NT$61.14 |
| 總計 價格 | NT$61.14 | ||
條帶式包裝 & 複捲式
| 數量 | 價格 |
|---|---|
| 1+ | NT$61.140 |
| 10+ | NT$37.830 |
| 100+ | NT$24.770 |
| 500+ | NT$19.460 |
| 1000+ | NT$14.530 |
| 5000+ | NT$13.350 |
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商INFINEON
製造商產品編號BSO150N03MDGXUMA1复制
製造商標準前置時間15 週
訂購代碼
複捲式2480752RL
條帶式包裝2480752
其他名稱BSO150N03MD G, SP000447476
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds N Channel30V
Drain Source Voltage Vds P Channel30V
Continuous Drain Current Id N Channel8A
Continuous Drain Current Id P Channel8A
Drain Source On State Resistance N Channel0.015ohm
Drain Source On State Resistance P Channel-
Transistor Case StyleSOIC
No. of Pins8Pins
Power Dissipation N Channel1.4W
Power Dissipation P Channel1.4W
Operating Temperature Max150°C
Product Range-
Qualification-
SVHCNo SVHC (25-Jun-2025)
產品總覽
The BSO150N03MD G is a dual N-channel MOSFET optimized for 5V driver application (notebook, VGA and POL) and qualified for consumer level application. The ultra low gate and output charge, together with lowest ON-state resistance in small footprint packages make OptiMOS™ power MOSFETs the best choice for the demanding requirements of voltage regulator solutions in server, data-com and telecom applications.
- Low FOMSW for high frequency SMPS
- 100% Avalanche tested
- Very low ON-resistance
- Excellent gate charge
- Halogen-free
應用
Industrial, Power Management, Communications & Networking
技術規格
Channel Type
N Channel
Drain Source Voltage Vds P Channel
30V
Continuous Drain Current Id P Channel
8A
Drain Source On State Resistance P Channel
-
No. of Pins
8Pins
Power Dissipation P Channel
1.4W
Product Range
-
MSL
MSL 3 - 168 hours
Drain Source Voltage Vds N Channel
30V
Continuous Drain Current Id N Channel
8A
Drain Source On State Resistance N Channel
0.015ohm
Transistor Case Style
SOIC
Power Dissipation N Channel
1.4W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (25-Jun-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.0005