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BSP613PH6327XTSA1
Power MOSFET, P Channel, 60 V, 2.9 A, 0.13 ohm, SOT-223, Surface Mount
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| 數量 | 價格 |
|---|---|
| 1+ | NT$67.590 |
| 10+ | NT$42.370 |
| 100+ | NT$27.850 |
| 500+ | NT$22.520 |
| 1000+ | NT$20.640 |
| 5000+ | NT$18.760 |
價格Each
最少: 1
多項: 1
NT$67.59
品項附註
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產品訊息
製造商INFINEON
製造商產品編號BSP613PH6327XTSA1复制
製造商標準前置時間8 週
訂購代碼2377261
其他名稱BSP613P H6327, SP001058788
技術資料表
Channel TypeP Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id2.9A
Drain Source On State Resistance0.13ohm
Transistor Case StyleSOT-223
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3V
Power Dissipation1.8W
No. of Pins4Pins
Operating Temperature Max150°C
Product Range-
QualificationAEC-Q101
MSL-
SVHCNo SVHC (25-Jun-2025)
產品總覽
The BSP613P H6327 is a -60V P-channel Power MOSFET that consistently meets highest quality and performance demands in key specifications for power system design such as on-state resistance and Figure of Merit characteristics.
- Enhancement mode
- Avalanche rated
- dv/dt Rated
- AEC-Q101 qualified
應用
Automotive, Consumer Electronics, Power Management, Motor Drive & Control
技術規格
Channel Type
P Channel
Continuous Drain Current Id
2.9A
Transistor Case Style
SOT-223
Rds(on) Test Voltage
10V
Power Dissipation
1.8W
Operating Temperature Max
150°C
Qualification
AEC-Q101
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds
60V
Drain Source On State Resistance
0.13ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
3V
No. of Pins
4Pins
Product Range
-
MSL
-
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：Malaysia
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：Malaysia
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (25-Jun-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.003629