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BSS138N H6327
Power MOSFET, N Channel, 60 V, 230 mA, 3.5 ohm, SOT-23, Surface Mount
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包裝選項
| 包裝類型 | 數量 | 單價: | 總計 |
|---|---|---|---|
| 條帶式包裝 | 5 | NT$13.180 | NT$65.90 |
| 總計 價格 | NT$65.90 | ||
條帶式包裝 & 複捲式
| 數量 | 價格 |
|---|---|
| 5+ | NT$13.180 |
| 10+ | NT$9.130 |
| 100+ | NT$5.790 |
| 500+ | NT$3.660 |
| 1000+ | NT$1.760 |
| 5000+ | NT$1.730 |
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商INFINEON
製造商產品編號BSS138N H6327复制
訂購代碼
複捲式1156434RL
條帶式包裝1156434
其他名稱SP000919330
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id230mA
Drain Source On State Resistance3.5ohm
Transistor Case StyleSOT-23
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max1V
Power Dissipation360mW
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
SVHCNo SVHC (17-Dec-2015)
產品總覽
The BSS138N H6327 from Infineon is surface mount, N channel SIPMOS small signal transistor in SOT-23 package.
- Automotive grade AEC-Q101 qualified
- Drain to source voltage (Vds) of 60V
- Gate to source voltage of ±20V
- Continuous drain current (Id) of 230mA
- Power dissipation (pd) of 360mW
- Operating temperature range -55°C to 150°C
- Low on state resistance of 2.2ohm at Vgs 10V
應用
Power Management, Consumer Electronics, Portable Devices, Industrial, Automotive
技術規格
Channel Type
N Channel
Continuous Drain Current Id
230mA
Transistor Case Style
SOT-23
Rds(on) Test Voltage
10V
Power Dissipation
360mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (17-Dec-2015)
Drain Source Voltage Vds
60V
Drain Source On State Resistance
3.5ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1V
No. of Pins
3Pins
Product Range
-
MSL
-
技術文件 (1)
BSS138N H6327 的替代選擇
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法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：Malaysia
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：Malaysia
承擔產品生產最後程序之國家
關稅編號：85412900
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:待通知
SVHC:No SVHC (17-Dec-2015)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.01