
25,000 即日起您可預購補貨
| 數量 | 價格 |
|---|---|
| 1+ | NT$72.570 |
| 10+ | NT$44.890 |
| 100+ | NT$29.410 |
| 500+ | NT$23.090 |
| 1000+ | NT$18.220 |
| 5000+ | NT$17.360 |
產品訊息
產品總覽
The BSZ520N15NS3 G is an OptiMOS™ N-channel Power MOSFET ideal for high-frequency switching and synchronous rectification. It achieves a reduction in RDS (ON) of 40% and of 45% in figure of merit (FOM) compared to the next best competitor. This drastic improvement opens new possibilities like moving from leaded packages to SMD packages or effectively replacing two old parts with one OptiMOS™ part.
- Excellent switching performance
- World's lowest RDS (ON)
- Very low Qg and Qgd
- Excellent gate charge x RDS (ON) product (FOM)
- MSL1 rated 2
- Increased efficiency
- Highest power density
- Less paralleling required
- Smallest board-space consumption
- Easy-to-design products
- Optimized for DC-to-DC conversion
- Qualified according to JEDEC for target applications
- Halogen-free, Green device
應用
Power Management, Motor Drive & Control, Automotive, Communications & Networking, Audio
警告
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
技術規格
N Channel
21A
PG-TSDSON
10V
57W
150°C
-
No SVHC (25-Jun-2025)
150V
0.052ohm
Surface Mount
3V
8Pins
-
MSL 1 - Unlimited
技術文件 (1)
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法規與環境保護
承擔產品生產最後程序之國家原產地:Malaysia
承擔產品生產最後程序之國家
RoHS
RoHS
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