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| 數量 | 價格 |
|---|---|
| 1+ | NT$169.600 |
| 10+ | NT$130.090 |
| 25+ | NT$119.960 |
| 50+ | NT$114.560 |
| 100+ | NT$109.150 |
| 250+ | NT$104.090 |
| 500+ | NT$100.710 |
| 1000+ | NT$99.360 |
產品訊息
產品總覽
The BTS640S2G is a N-channel high-side vertical Power FET Switch with charge pump, ground referenced CMOS compatible input and diagnostic feedback and proportional sense of load current, monolithically integrated in smart SIPMOS® technology. It provides embedded protective functions, under-voltage and overvoltage shutdown with auto-restart and hysteresis.
- Short-circuit protection
- Current limitation
- Proportional load current sense
- CMOS compatible input
- Open drain diagnostic output
- Fast demagnetization of inductive loads
- Overload protection
- Thermal shutdown
- Overvoltage protection including load dump
- Reverse battery protection
- Loss of ground and loss of VBB protection
- Electrostatic discharge (ESD) protection
- High voltage capability
- Benchmark energy robustness
應用
Industrial, Computers & Computer Peripherals, Automotive
警告
ESD sensitive device, take proper precaution while handling the device. Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
技術規格
High Side
34V
0.03ohm
7Pins
Active High
-40°C
AEC-Q100
MSL 1 - Unlimited
AEC-Q100
1Channels
24A
TO-263 (D2PAK)
Yes
1Outputs
150°C
-
No SVHC (25-Jun-2025)
TO-263 (D2PAK)
技術文件 (1)
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法規與環境保護
承擔產品生產最後程序之國家原產地:Malaysia
承擔產品生產最後程序之國家
RoHS
RoHS
產品合規憑證
