CY62147EV30LL-45ZSXIT

CY62147EV30LL-45ZSXIT is a high performance CMOS static RAM (SRAM) organized as 256K words by 16 bits. This device features advanced circuit design to provide ultra low active current. It is ideal for providing More Battery Life™ (MoBL®) in portable applications such as cellular telephones. The device also has an automatic power down feature that significantly reduces power consumption when addresses are not toggling. Placing the device into standby mode reduces power consumption by more than 99 percent when deselected (active-low CE HIGH or both active-low BLE and active-low BHE are HIGH). The input and output pins (I/O0 through I/O15) are placed in a high impedance state when: deselected (active-low CE HIGH), outputs are disabled (active-low OE HIGH), both byte high enable and byte low enable are disabled (active-low BHE, active-low BLE HIGH), write operation is active (active-low CE LOW and active-low WE LOW).

• Very high speed: 45ns
• Wide voltage range from 2.20V to 3.60V
• Pin compatible with CY62147DV30
• Maximum standby current is 7µA (industrial)
• Typical active current is 3.5mA at f=1MHz
• Easy memory expansion with active-low CE and active-low OE features
• Automatic power down when deselected
• Complementary metal oxide semiconductor (CMOS) for optimum speed and power
• 44-pin TSOP Type II package
• Industrial ambient temperature range from -40°C to +85°C