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| 數量 | 價格 |
|---|---|
| 1+ | NT$228.930 |
| 10+ | NT$213.410 |
| 25+ | NT$206.940 |
| 50+ | NT$202.100 |
| 100+ | NT$197.240 |
| 250+ | NT$183.670 |
| 500+ | NT$175.380 |
產品訊息
產品總覽
CY7C1041G-10VXIT is a high-performance CMOS fast static RAM device with embedded ECC. This offers in single chip-enable option and in multiple pin configurations. Data writes are performed by asserting the chip enable active-low (CE) and write enable active-low (WE) inputs LOW, while providing the data on I/O0 through I/O15 and address on A0 through A17 pins. The byte high enable active-low (BHE) and byte low enable active-low (BLE) inputs control write operations to the upper and lower bytes of the specified memory location. Active-low BHE controls I/O8 through I/O15 and active-low BLE controls I/O0 through I/O7.
- High speed tAA = 10ns, 4.5V–5.5V voltage range, 4Mbit density
- 44-pin SOJ (400 Mils) package
- Active current: ICC = 38mA typical, standby current: ISB2 = 6mA typical
- 1.0-V data retention, TTL-compatible inputs and outputs
- Industrial operating temperature rating range from –40°C to +85°C
技術規格
4Mbit
4Mbit
4.5V to 5.5V
SOJ
44Pins
10ns
5V
Surface Mount
85°C
-
Asynchronous SRAM
256Kword x 16bit
256Kword x 16bit
SOJ
4.5V
5.5V
-
-40°C
-
No SVHC (25-Jun-2025)
技術文件 (1)
法規與環境保護
承擔產品生產最後程序之國家原產地:Philippines
承擔產品生產最後程序之國家
RoHS
RoHS
產品合規憑證
