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IDDD04G65C6XTMA1
Silicon Carbide Schottky Diode, CoolSiC 6G 650V, Single, 650 V, 13 A, 6.9 nC, HDSOP
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製造商INFINEON
製造商產品編號IDDD04G65C6XTMA1复制
訂購代碼
複捲式2895602RL
條帶式包裝2895602
Product RangeCoolSiC 6G 650V
其他名稱IDDD04G65C6, SP001679784
您的零件号
不再生產
包裝選項
產品訊息
製造商INFINEON
製造商產品編號IDDD04G65C6XTMA1复制
訂購代碼
複捲式2895602RL
條帶式包裝2895602
Product RangeCoolSiC 6G 650V
其他名稱IDDD04G65C6, SP001679784
技術資料表
Product RangeCoolSiC 6G 650V
Diode ConfigurationSingle
Repetitive Peak Reverse Voltage650V
Average Forward Current13A
Total Capacitive Charge6.9nC
Diode Case StyleHDSOP
No. of Pins10 Pin
Operating Temperature Max175°C
Diode MountingSurface Mount
Qualification-
SVHCNo SVHC (27-Jun-2018)
IDDD04G65C6XTMA1 的替代選擇
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產品總覽
The CoolSiC™ generation G6 is the leading edge technology from Infineon for the SiC Schottky barrier diodes. The G6 is an advancement of Infineon's G5 technology with the introduction of a novel Schottky metal system. The CoolSiC™ Schottky diode G6 has been designed to complement our 600V and 650V CoolMOS™ 7 families, meeting the most stringent application requirements in this voltage range. Offering key benefits such as System cost and size savings due to the reduced cooling requirements as well as enabling higher frequency and increased power density.
技術規格
Product Range
CoolSiC 6G 650V
Repetitive Peak Reverse Voltage
650V
Total Capacitive Charge
6.9nC
No. of Pins
10 Pin
Diode Mounting
Surface Mount
SVHC
No SVHC (27-Jun-2018)
Diode Configuration
Single
Average Forward Current
13A
Diode Case Style
HDSOP
Operating Temperature Max
175°C
Qualification
-
相關產品
找到 4 個產品
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：Malaysia
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：Malaysia
承擔產品生產最後程序之國家
關稅編號：85411000
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (27-Jun-2018)
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產品合規憑證
重量 (公斤)：.0005