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IMDQ65R020M2HXUMA1
Silicon Carbide MOSFET, Single, N Channel, 97 A, 650 V, 0.018 ohm, HDSOP
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製造商INFINEON
製造商產品編號IMDQ65R020M2HXUMA1复制
製造商標準前置時間54 週
訂購代碼
複捲式4667120RL
條帶式包裝4667120
Product RangeCoolSiC G2 Series
其他名稱IMDQ65R020M2H, SP006051120
您的零件号
454 有存貨
需要更多？
454 件可于 3-4 個工作日後配送(英國 件庫存)
包裝選項
| 包裝類型 | 數量 | 單價: | 總計 |
|---|---|---|---|
| 條帶式包裝 | 1 | NT$533.840 | NT$533.84 |
| 總計 價格 | NT$533.84 | ||
條帶式包裝 & 複捲式
| 數量 | 價格 |
|---|---|
| 1+ | NT$533.840 |
| 5+ | NT$427.300 |
| 10+ | NT$320.760 |
| 50+ | NT$314.350 |
| 100+ | NT$307.930 |
| 250+ | NT$301.520 |
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商INFINEON
製造商產品編號IMDQ65R020M2HXUMA1复制
製造商標準前置時間54 週
訂購代碼
複捲式4667120RL
條帶式包裝4667120
Product RangeCoolSiC G2 Series
其他名稱IMDQ65R020M2H, SP006051120
技術資料表
MOSFET Module ConfigurationSingle
Channel TypeN Channel
Continuous Drain Current Id97A
Drain Source Voltage Vds650V
Drain Source On State Resistance0.018ohm
Transistor Case StyleHDSOP
No. of Pins22Pins
Rds(on) Test Voltage20V
Gate Source Threshold Voltage Max5.6V
Power Dissipation394W
Operating Temperature Max175°C
Product RangeCoolSiC G2 Series
SVHCNo SVHC (25-Jun-2025)
產品總覽
IMDQ65R020M2HXUMA1 is a CoolSiC™ MOSFET 650V Generation 2 (G2) (G2) in Q-DPAK package. It utilizes the G2 superior switching performance, which also provides advantages of top-side cooling. This innovation enhances the current offerings of CoolSiC™ in TOLT and CoolMOS™ in Q-DPAK packages, facilitating comprehensive system-level enhancements, including reductions in board space and BOM costs, as well as maximization of system power density. Typical applications include SMPS, solar PV inverters, energy storage and battery formation, UPS, EV charging infrastructure and motor drives.
- 20mohm RDs(on) typical
- Ultra‑low switching losses
- Benchmark gate threshold voltage, VGS(th) = 4.5V
- Robust against parasitic turn‑on even with 0V turn‑off gate voltage
- Flexible driving voltage and compatible with bipolar driving scheme
- Robust body diode operation under hard commutation events
- .XT interconnection technology for best‑in‑class thermal performance
- Enables high efficiency and high power density designs
技術規格
MOSFET Module Configuration
Single
Continuous Drain Current Id
97A
Drain Source On State Resistance
0.018ohm
No. of Pins
22Pins
Gate Source Threshold Voltage Max
5.6V
Operating Temperature Max
175°C
MSL
MSL 3 - 168 hours
Channel Type
N Channel
Drain Source Voltage Vds
650V
Transistor Case Style
HDSOP
Rds(on) Test Voltage
20V
Power Dissipation
394W
Product Range
CoolSiC G2 Series
SVHC
No SVHC (25-Jun-2025)
技術文件 (1)
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：Malaysia
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：Malaysia
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (25-Jun-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.000001