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IMZA120R007M1HXKSA1
Silicon Carbide MOSFET, Single, N Channel, 225 A, 1.2 kV, 7000 µohm, TO-247
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製造商INFINEON
製造商產品編號IMZA120R007M1HXKSA1复制
製造商標準前置時間54 週
訂購代碼3958244
Product RangeCoolSiC Trench Series
其他名稱SP005425973, IMZA120R007M1H
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| 數量 | 價格 |
|---|---|
| 1+ | NT$1,745.250 |
| 5+ | NT$1,530.640 |
| 10+ | NT$1,316.020 |
| 50+ | NT$1,289.700 |
| 100+ | NT$1,263.380 |
價格Each
最少: 1
多項: 1
NT$1,745.25
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商INFINEON
製造商產品編號IMZA120R007M1HXKSA1复制
製造商標準前置時間54 週
訂購代碼3958244
Product RangeCoolSiC Trench Series
其他名稱SP005425973, IMZA120R007M1H
技術資料表
MOSFET Module ConfigurationSingle
Channel TypeN Channel
Continuous Drain Current Id225A
Drain Source Voltage Vds1.2kV
Drain Source On State Resistance7000µohm
Transistor Case StyleTO-247
No. of Pins4Pins
Rds(on) Test Voltage18V
Gate Source Threshold Voltage Max4.2V
Power Dissipation750W
Operating Temperature Max175°C
Product RangeCoolSiC Trench Series
SVHCNo SVHC (25-Jun-2025)
產品總覽
IMZA120R007M1HXKSA1 is a CoolSiC™ 1200V SiC Trench MOSFET. Potential applications include general purpose drives (GPD), EV charging, online UPS/industrial UPS, string inverter, solar power optimizer.
- Very low switching losses
- Benchmark gate threshold voltage, VGS(th) = 4.2V
- Robust against parasitic turn on, 0V turn-off gate voltage can be applied
- Robust body diode for hard commutation
- .XT interconnection technology for best-in-class thermal performance
- Qualified for industrial applications according to the relevant tests of JEDEC47/20/22
- Drain-source voltage is 1200V at Tvj ≥ 25°C
- Drain-source on-state resistance is 7mohm typ at Tvj = 25°C, VGS(on) = 18V, ID = 108A
- PG-TO247-4-U02 package
- Storage temperature range from -55 to 150°C
技術規格
MOSFET Module Configuration
Single
Continuous Drain Current Id
225A
Drain Source On State Resistance
7000µohm
No. of Pins
4Pins
Gate Source Threshold Voltage Max
4.2V
Operating Temperature Max
175°C
SVHC
No SVHC (25-Jun-2025)
Channel Type
N Channel
Drain Source Voltage Vds
1.2kV
Transistor Case Style
TO-247
Rds(on) Test Voltage
18V
Power Dissipation
750W
Product Range
CoolSiC Trench Series
技術文件 (1)
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法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (25-Jun-2025)
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產品合規憑證
重量 (公斤)：.008081