列印頁面
IMZA120R030M1HXKSA1
Silicon Carbide MOSFET, Single, N Channel, 70 A, 1.2 kV, 0.0409 ohm, TO-247
圖片僅供舉例說明。 請參閱產品描述。
製造商INFINEON
製造商產品編號IMZA120R030M1HXKSA1复制
製造商標準前置時間62 週
訂購代碼4376969
Product RangeCoolSiC Trench Series
其他名稱IMZA120R030M1H, SP005425985
您的零件号
380 有存貨
需要更多？
380 件可于 3-4 個工作日後配送(英國 件庫存)
| 數量 | 價格 |
|---|---|
| 1+ | NT$567.150 |
| 5+ | NT$447.510 |
| 10+ | NT$327.870 |
| 50+ | NT$321.320 |
| 100+ | NT$314.760 |
| 250+ | NT$312.470 |
價格Each
最少: 1
多項: 1
NT$567.15
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商INFINEON
製造商產品編號IMZA120R030M1HXKSA1复制
製造商標準前置時間62 週
訂購代碼4376969
Product RangeCoolSiC Trench Series
其他名稱IMZA120R030M1H, SP005425985
技術資料表
MOSFET Module ConfigurationSingle
Channel TypeN Channel
Continuous Drain Current Id70A
Drain Source Voltage Vds1.2kV
Drain Source On State Resistance0.0409ohm
Transistor Case StyleTO-247
No. of Pins4Pins
Rds(on) Test Voltage18V
Gate Source Threshold Voltage Max5.2V
Power Dissipation273W
Operating Temperature Max175°C
Product RangeCoolSiC Trench Series
SVHCNo SVHC (25-Jun-2025)
產品總覽
IMZA120R030M1HXKSA1 is a CoolSiC™ 1200V SiC Trench MOSFET. Suitable for General purpose drives (GPD), EV-charging, online UPS/industrial UPS, string inverter and solar power optimizer applications.
- Silicon carbide MOSFET with .XT interconnection technology
- 1200V VDSS at Tvj = 25°C and 70A IDDC at Tc = 25°C
- RDS(on) = 30mohm at VGS = 18V, Tvj = 25°C
- Very low switching losses
- Short circuit withstand time 3µs
- Benchmark gate threshold voltage, VGS(th) = 4.2V
- Robust against parasitic turn on, 0V turn-off gate voltage can be applied
- Robust body diode for hard commutation
- XT interconnection technology for best-in-class thermal performance
- 4 pin TO-247 package, virtual junction temperature range from -55 to 175°C
技術規格
MOSFET Module Configuration
Single
Continuous Drain Current Id
70A
Drain Source On State Resistance
0.0409ohm
No. of Pins
4Pins
Gate Source Threshold Voltage Max
5.2V
Operating Temperature Max
175°C
SVHC
No SVHC (25-Jun-2025)
Channel Type
N Channel
Drain Source Voltage Vds
1.2kV
Transistor Case Style
TO-247
Rds(on) Test Voltage
18V
Power Dissipation
273W
Product Range
CoolSiC Trench Series
技術文件 (1)
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：China
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (25-Jun-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤)：.008165