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586 件可于 3-4 個工作日後配送(英國 件庫存)
| 數量 | 價格 |
|---|---|
| 1+ | NT$186.900 |
| 10+ | NT$122.230 |
| 100+ | NT$90.220 |
| 500+ | NT$80.200 |
| 1000+ | NT$71.140 |
價格Each
最少: 1
多項: 1
NT$186.90
品項附註
僅針對此訂單新增至訂單確認、發票和出貨備註。
產品訊息
製造商INFINEON
製造商產品編號IPB017N06N3GATMA1复制
製造商標準前置時間10 週
訂購代碼1775519
其他名稱IPB017N06N3 G, SP000434404
技術資料表
Channel TypeN Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id180A
Drain Source On State Resistance1700µohm
Transistor Case StyleTO-263 (D2PAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3V
Power Dissipation250W
No. of Pins7Pins
Operating Temperature Max175°C
Product Range-
Qualification-
SVHCNo SVHC (25-Jun-2025)
產品總覽
The IPB017N06N3 G is a 60V N-channel Power MOSFET optimized for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers, desktops and tablet charger. Dramatically reduced gate charge and output charge enable high system efficiency and power density. The OptiMOS™ power MOSFET is ideally suited for high frequency switching and DC-DC converters.
- Highest system efficiency
- Less paralleling required
- Increased power density
- Very low voltage overshoot
- Superior thermal resistance
應用
Power Management, Alternative Energy, Motor Drive & Control, Industrial
技術規格
Channel Type
N Channel
Continuous Drain Current Id
180A
Transistor Case Style
TO-263 (D2PAK)
Rds(on) Test Voltage
10V
Power Dissipation
250W
Operating Temperature Max
175°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Drain Source Voltage Vds
60V
Drain Source On State Resistance
1700µohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
3V
No. of Pins
7Pins
Product Range
-
MSL
MSL 1 - Unlimited
IPB017N06N3GATMA1 的替代選擇
找到 4 個產品
法規與環境保護
原產地:
承擔產品生產最後程序之國家原產地:Malaysia
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地:Malaysia
承擔產品生產最後程序之國家
關稅編號:85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定:是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (25-Jun-2025)
下載產品合規憑證
產品合規憑證
重量 (公斤):.002
