IPB025N10N3GATMA1

The IPB025N10N3 G is a 100V N-channel Power MOSFET that offers superior solutions for high efficiency and high power-density SMPS. Compared to other transistors, this MOSFET achieves a reduction of 30% in both RDS (on) and FOM (Figure of Merit). The OptiMOS™ MOSFET offers industry's lowest RDS (on) within the voltage classes. It is ideally suited for high frequency switching applications and optimized technology for DC-DC converters.

• Excellent switching performance
• Environmentally-friendly
• Increased efficiency
• Highest power density
• Less paralleling required
• Smallest board-space consumption
• Easy to design

應用

Power Management, Motor Drive & Control, Industrial, Audio

警告

Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.