IPB036N12N3GATMA1

The IPB036N12N3 G is an OptiMOS™ N-channel Power MOSFET offers at the same time the lowest ON-state resistances of the industry and the fastest switching behaviour, allowing for the achievement of outstanding performance in a wide range of applications. The 120V OptiMOS™ technology gives new possibilities for optimized solutions.

• Excellent switching performance
• World's lowest RDS (ON)
• Very low Qg and Qgd
• Excellent gate charge x RDS (ON) product (FOM)
• MSL1 rated 2
• Environmentally friendly
• Increased efficiency
• Highest power density
• Less paralleling required
• Smallest board-space consumption
• Easy-to-design products
• Qualified according to JEDE for target applications
• Halogen-free, Green device
• Ideal for high-frequency switching and synchronous rectification
• Normal level
• 100% Avalanche tested

應用

Power Management, Motor Drive & Control, Computers & Computer Peripherals, Portable Devices, LED Lighting

警告

Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.