IPD65R190C7ATMA1

The IPD65R190C7 is a 650V N-channel CoolMOS™ Power MOSFET providing the world's lowest RDS (on) with low switching losses and efficiency improvements over the full load range. The new CoolMOS™ C7 series offers a ~50% reduction in turn-off losses (Eoss) compared to the CoolMOS™ CP, offering a GaN-like level of performance in PFC, TTF and other hard-switching topologies. The CoolMOS™ MOSFET offers a significant reduction of conduction, switching and driving losses and enable high power density and efficiency for superior power conversion systems. The latest state-of-the-art generation of high voltage power MOSFETs makes AC-DC power supplies more efficient, more compact, lighter and cooler than ever before.

• Reduced energy stored in output capacitance (Eoss)
• Lower gate charge
• Space-saving through reduction of parts
• Improved safety margin
• Lowest conduction losses
• Low switching losses
• Better light load efficiency
• Increasing power density

應用

Communications & Networking, Computers & Computer Peripherals, Alternative Energy

警告

Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.