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IPD90P03P4L04ATMA1
Power MOSFET, P Channel, 30 V, 90 A, 4100 µohm, TO-252 (DPAK), Surface Mount
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產品訊息
製造商INFINEON
製造商產品編號IPD90P03P4L04ATMA1
訂購代碼2432731
其他名稱IPD90P03P4L-04, SP000396300
技術資料表
Channel TypeP Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id90A
Drain Source On State Resistance4100µohm
Transistor Case StyleTO-252 (DPAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max1.5V
Power Dissipation137W
No. of Pins3Pins
Operating Temperature Max175°C
Product Range-
QualificationAEC-Q101
MSL-
SVHCNo SVHC (23-Jan-2024)
IPD90P03P4L04ATMA1 的替代選擇
找到 3 個產品
產品總覽
The IPD90P03P4L-04 is an OptiMOS®-P2 P-channel Power Transistor with enhancement mode, logic level, avalanche rated, no charge pump required for high side drive, simple interface drive circuit and lowest switching and conduction power losses for highest thermal efficiency.
- High current capability
- Intended for reverse battery protection
- AEC-Q101 Qualified
- MSL1 up to 260°C peak reflow
應用
Power Management, Motor Drive & Control, Automotive
技術規格
Channel Type
P Channel
Continuous Drain Current Id
90A
Transistor Case Style
TO-252 (DPAK)
Rds(on) Test Voltage
10V
Power Dissipation
137W
Operating Temperature Max
175°C
Qualification
AEC-Q101
SVHC
No SVHC (23-Jan-2024)
Drain Source Voltage Vds
30V
Drain Source On State Resistance
4100µohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1.5V
No. of Pins
3Pins
Product Range
-
MSL
-
相關產品
找到 2 個產品
法規與環境保護
原產地：
承擔產品生產最後程序之國家原產地：Malaysia
承擔產品生產最後程序之國家
承擔產品生產最後程序之國家原產地：Malaysia
承擔產品生產最後程序之國家
關稅編號：85412900
US ECCN:EAR99
EU ECCN:NLR
符合 RoHS 規定：是
RoHS
符合 RoHS 鄰苯二甲酸酯類規定:是
RoHS
SVHC:No SVHC (23-Jan-2024)
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產品合規憑證
重量 (公斤)：.000435