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| 包裝類型 | 數量 | 單價: | 總計 |
|---|---|---|---|
| 條帶式包裝 | 1 | NT$106.390 | NT$106.39 |
| 總計 價格 | NT$106.39 | ||
| 數量 | 價格 |
|---|---|
| 1+ | NT$106.390 |
| 10+ | NT$53.030 |
| 100+ | NT$47.860 |
| 500+ | NT$38.810 |
| 1000+ | NT$35.260 |
| 5000+ | NT$34.560 |
產品訊息
產品總覽
IPL60R185P7AUMA1 is a 600V CoolMOS™ P7 power transistor. The CoolMOS™ 7th generation platform is a revolutionary technology for high voltage power MOSFETs, designed according to the super junction (SJ) principle and pioneered by Infineon Technologies. The 600V CoolMOS™ P7 series is the successor to the CoolMOS™ P6 series. It combines the benefits of a fast switching SJ MOSFET with excellent ease of use, e.g. very low ringing tendency, outstanding robustness of body diode against hard commutation and excellent ESD capability. Further more, extremely low switching and conduction losses make switching applications even more efficient, more compact and much cooler. Typical applications include PFC stages, hard switching PWM stages and resonant switching stages for e.g. PC Silver box, adapter, LCD & PDP TV, lighting, server, telecom and UPS.
- Suitable for hard and soft switching (PFC and LLC) due to an outstanding commutation ruggedness
- Significant reduction of switching and conduction losses
- Excellent ESD robustness <gt/>2KV (HBM) for all products
- Fully qualified accordance with JEDEC for industrial applications
- Ease of use and fast design-in through low ringing tendency and usage across PFC and PWM stages
- Simplified thermal management due to low switching and conduction losses
- Increased power density solutions
- Suitable for a wide variety of applications and power ranges
- 650V VDS @ Tj,max, 185mohm RDS(on),max
- 53A ID pulse and 800A/µs body diode diF/dt
技術規格
N Channel
19A
VSON
10V
82W
150°C
-
No SVHC (25-Jun-2025)
600V
0.185ohm
Surface Mount
4V
4Pins
CoolMOS P7 Series
MSL 2A - 4 weeks
技術文件 (1)
法規與環境保護
承擔產品生產最後程序之國家原產地:Malaysia
承擔產品生產最後程序之國家
RoHS
RoHS
產品合規憑證
